| Presentation | 2003/10/13 Temperature-frequency Stabilization technique for Dielectric Resonator Oscillator by Gate-bias control Masaomi TSURU, Kenji KAWAKAMI, Kenichi TAJIMA, Tsuyoshi MIZUGUCHI, Moriyasu MIYAZAKI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In general, an oscillation frequency of dielectric resonator oscillator (DRO) is stability for temperature. In order to get higher stabilization of the oscillation frequency of DRO, the compensation-circuit is needed. This paper presents a temperature-frequency stabilization technique for DRO by gate-bias control of FET used as active device . The temperature characteristic of the oscillation frequency is single-peak characteristic. The reason why the temperature characteristic of the oscillation frequency of DRO is single-peak characteristic is a temperature characteristic of the resonant frequency of DR is non-linear. By connecting the compensation-circuit with resists and thermistors only to gate, the oscillation frequency of DRO is stabilized. The measurement result of the developed DRO in Ku-band achieves the frequency stability of less than 55ppm (less than 0.5ppm/℃) over -45℃ to +85℃. Additionally, in case of self-bias condition, we lead a relation with a self -bias resistance to frequency bandwidth that can be stabilized by gate-bias control. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DRO / Gate-bias Control / Temperature-Compensation |
| Paper # | EMCJ2003-74,MW2003-171 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2003/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature-frequency Stabilization technique for Dielectric Resonator Oscillator by Gate-bias control |
| Sub Title (in English) | |
| Keyword(1) | DRO |
| Keyword(2) | Gate-bias Control |
| Keyword(3) | Temperature-Compensation |
| 1st Author's Name | Masaomi TSURU |
| 1st Author's Affiliation | Information Technotogy R&D c enter, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Kenji KAWAKAMI |
| 2nd Author's Affiliation | Information Technotogy R&D c enter, Mitsubishi Electric Corporation |
| 3rd Author's Name | Kenichi TAJIMA |
| 3rd Author's Affiliation | Information Technotogy R&D c enter, Mitsubishi Electric Corporation |
| 4th Author's Name | Tsuyoshi MIZUGUCHI |
| 4th Author's Affiliation | Communication Systems Center, Mitsubishi Electric Corporation |
| 5th Author's Name | Moriyasu MIYAZAKI |
| 5th Author's Affiliation | Information Technotogy R&D c enter, Mitsubishi Electric Corporation |
| Date | 2003/10/13 |
| Paper # | EMCJ2003-74,MW2003-171 |
| Volume (vol) | vol.103 |
| Number (no) | 371 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |