Presentation 2004/7/2
Development of Fe-Co-B/[Ni-Fe/Si] Soft Magnetic Underlayer with High Anisotropy Field and High Saturation Magnetization
Sukefumi ITO, Sok-Hyun KONG, Takeshi OKAMOTO, Shigeki NAKAGAWA,
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Abstract(in English) The origin of high anisotropy field H_k and low coercivity H_k of Fe-Co-B/Ni-Fe double layered film with high 4πM_s was investigated. In-plane and out-of-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was expanded than that along the hard axis direction. The fact was confirmed that such stress caused by the lattice expansion had significant effects on the magnetoelastic energy in this double layer. We investigated the dependence of H_k on Ar gas pressure. It was considered that the anisotropic stress is generated for the deviation of incident angle of sputtered particles. In order to align the magnetic anisotropy field to the cross track direction on a disk, the deposition of the SUL were performed on a rotating disk substrate. We succeeded in production of disk, which has Hk of 280 Oe in a radial direction of the disk in the whole ares of it.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Fe-Co-B layer / magnetic anisotropy field / residual stress / Soft magnetic underlayer / radial anisotropy field on disk
Paper # MR2004-9
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Committee MR
Conference Date 2004/7/2(1days)
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Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Fe-Co-B/[Ni-Fe/Si] Soft Magnetic Underlayer with High Anisotropy Field and High Saturation Magnetization
Sub Title (in English)
Keyword(1) Fe-Co-B layer
Keyword(2) magnetic anisotropy field
Keyword(3) residual stress
Keyword(4) Soft magnetic underlayer
Keyword(5) radial anisotropy field on disk
1st Author's Name Sukefumi ITO
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology()
2nd Author's Name Sok-Hyun KONG
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
3rd Author's Name Takeshi OKAMOTO
3rd Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
4th Author's Name Shigeki NAKAGAWA
4th Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
Date 2004/7/2
Paper # MR2004-9
Volume (vol) vol.104
Number (no) 167
Page pp.pp.-
#Pages 6
Date of Issue