| Presentation | 2004/7/1 MR enhancement effect by current-confined-path structure in CPP-GMR films Hideaki FUKUZAWA, Hiromi YUASA, Susumu HASHIMOTO, Katsuhiko KOI, Hitoshi IWASAKI, Masayuki TAKAGISHI, Yoichiro TANAKA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have successfully realized CPP-GMR spin-valve films which have current-confined-path (CCP) structure made by a nano-oxide-layer (NOL) in a spacer layer. CPP spin-valve films with an AlCu-NOL oxidized by ion-assisted oxidation (IAO) instead of natural oxidation, CPP-GMR performance was drastically increased to 5.4 % at an RA of 500 mΩμm^2. By using Valet-Fert model, the enhancement of an MR ratio by inserting an NOL can be well explained by the CCP effect. Moreover, the enhancement of MR ratio by using IAO can be explained by the improvement of metal purity of Cu in the CCP structure. By further improvement of metal purity of the Cu, a large MR ratio more than 30 % can be expected at a small RA of 300 mΩμm^2. The CCP-CPP spin-valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CPP-GMR / current-confined-path (CCP) / spin-valve / ion-assisted oxidation (IAO) / nano-oxide layer (NOL) |
| Paper # | MR2004-2 |
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| Conference Information | |
| Committee | MR |
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| Conference Date | 2004/7/1(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Magnetic Recording (MR) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MR enhancement effect by current-confined-path structure in CPP-GMR films |
| Sub Title (in English) | |
| Keyword(1) | CPP-GMR |
| Keyword(2) | current-confined-path (CCP) |
| Keyword(3) | spin-valve |
| Keyword(4) | ion-assisted oxidation (IAO) |
| Keyword(5) | nano-oxide layer (NOL) |
| 1st Author's Name | Hideaki FUKUZAWA |
| 1st Author's Affiliation | R&D Center, Toshiba Corporation() |
| 2nd Author's Name | Hiromi YUASA |
| 2nd Author's Affiliation | R&D Center, Toshiba Corporation |
| 3rd Author's Name | Susumu HASHIMOTO |
| 3rd Author's Affiliation | R&D Center, Toshiba Corporation |
| 4th Author's Name | Katsuhiko KOI |
| 4th Author's Affiliation | R&D Center, Toshiba Corporation |
| 5th Author's Name | Hitoshi IWASAKI |
| 5th Author's Affiliation | R&D Center, Toshiba Corporation:Core Technology Center, Toshiba Corporation |
| 6th Author's Name | Masayuki TAKAGISHI |
| 6th Author's Affiliation | Core Technology Center, Toshiba Corporation |
| 7th Author's Name | Yoichiro TANAKA |
| 7th Author's Affiliation | Core Technology Center, Toshiba Corporation |
| Date | 2004/7/1 |
| Paper # | MR2004-2 |
| Volume (vol) | vol.104 |
| Number (no) | 166 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |