Presentation 2003/6/5
Study of Nanocrystalline Soft Magnetic Material of an Fe-Si-Al-N Film with High Saturation Magnetization and Low SUL Noise
Shin SAITO, Atsushi HASHIMOTO, Kenichi HIRAI, Migaku TAKAHASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) To develop nanocrystalline soft magnetic underlayer (SUL) material with high saturation magnetization and low SUL noise, we studied the properties of an Fe-Si-Al-N film. To obtain SUL with high stray-field stability, the Fe-Si-Al-N film is applied to antiferro/ferromagnetic (AFM/FM) multilayer films. As the results, the following points are clarified: 1) As the composition of FeSiAlN film, with increasing nitrogen flow ratio, Fe is replace with N on constant Al + Si concentration line. 2) With increasing nitrogen content, soft magnetic properties of FeSiAlN film are increased due to nanocrystalline effect. 3) As the grain size of FeSiAlN film is decreased, the SUL noise of FeSiAlN film is reduced. Since subsequent high temperature annealing process is not necessary, this process is promising to be applied for moderate temperature process. 4) In the AFM/FM stacked SUL film, the unidirectionOal exchange energy J_k is decreased with the total magnetization of the film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FeSiAlN / soft underlayer / moderate temperature process / nanocrystalline effect / antiferro-ferromagnetic coupling
Paper # MR2003-2
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Committee MR
Conference Date 2003/6/5(1days)
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Registration To Magnetic Recording (MR)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of Nanocrystalline Soft Magnetic Material of an Fe-Si-Al-N Film with High Saturation Magnetization and Low SUL Noise
Sub Title (in English)
Keyword(1) FeSiAlN
Keyword(2) soft underlayer
Keyword(3) moderate temperature process
Keyword(4) nanocrystalline effect
Keyword(5) antiferro-ferromagnetic coupling
1st Author's Name Shin SAITO
1st Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University()
2nd Author's Name Atsushi HASHIMOTO
2nd Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
3rd Author's Name Kenichi HIRAI
3rd Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
4th Author's Name Migaku TAKAHASHI
4th Author's Affiliation New Industry Creation Hatchery Center, Tohoku University
Date 2003/6/5
Paper # MR2003-2
Volume (vol) vol.103
Number (no) 109
Page pp.pp.-
#Pages 6
Date of Issue