講演名 | 2002/11/1 Effect of doubly plasma oxidation time on TMR devices , |
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抄録(和) | |
抄録(英) | We fabricated MTJ devices that have doubly oxidized tunnel barrier using plasma oxidation method to form oxidized AlOx tunnel barrier. Doubly oxidation I , which sputtered 10 Å-bottom Al layer and oxidized it with oxidation time of 10 s. Subsequent sputtering of 13 Å-Al was performed and the metallic layer was oxidized for 50, 80, and 120 s, respectively. Doubly oxidation II, which sputtered 10 Å-bottom Al layer and oxidized it varying oxidation time for 30~120 s. Subsequent sputtering of 13 Å-Al was performed and the metallic layer was oxidized for 210 sec. Doubly oxidation process specimen showed MR ratio of above 27 % in all experiment range. Singly oxidation process, 13 Å-Al layer and oxidized up to 210 s, showed less MR ratio and more narrow process window than those of doubly oxidation. Cross-sectional TEM images showed that doubly oxidized barrowers were thinner and denser than singly oxidized ones. XPS characterization confirmed that doubly oxidation prevented oxidation of Fe with bottom insulating layer. As a result, doubly oxidation could have superior MR ratio in process extent during long oxidation time because of preventing oxidation of bottom magnetic layer than singly oxidation. |
キーワード(和) | |
キーワード(英) | Doubly oxidized barrier / MTJ / Plasma oxidation time / TEM / XPS |
資料番号 | MR2002-57 |
発行日 |
研究会情報 | |
研究会 | MR |
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開催期間 | 2002/11/1(から1日開催) |
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開催地(英) | |
テーマ(和) | |
テーマ(英) | |
委員長氏名(和) | |
委員長氏名(英) | |
副委員長氏名(和) | |
副委員長氏名(英) | |
幹事氏名(和) | |
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幹事補佐氏名(和) | |
幹事補佐氏名(英) |
講演論文情報詳細 | |
申込み研究会 | Magnetic Recording (MR) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Effect of doubly plasma oxidation time on TMR devices |
サブタイトル(和) | |
キーワード(1)(和/英) | / Doubly oxidized barrier |
第 1 著者 氏名(和/英) | / Obsung Song |
第 1 著者 所属(和/英) | The University of Seoul |
発表年月日 | 2002/11/1 |
資料番号 | MR2002-57 |
巻番号(vol) | vol.102 |
号番号(no) | 424 |
ページ範囲 | pp.- |
ページ数 | 5 |
発行日 |