Presentation 2003/7/24
Doppler Up-Shift of Frequency Using Optically Generated Plasma in Semiconductor Transmission Lines
Bae JONGSUCK, Koji MIZUNO,
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Abstract(in English) A novel method for frequency conversion using a transmission line on a semiconductor substrate has been discussed. Laser pulses move along the transmission line as generating electron-hole plasma at the surface of the semiconductor substrate. The plasma in the transmission line acts as a moving short with a relativistic velocity, reflecting an incident microwave and up-shifting the frequency through the double Doppler effect. Power and energy conversion efficiencies have been theoretically analyzed for the frequency conversion. The results have shown that the converter can be used to produce short millimeter and submillimeter waves.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Frequency conversion / Doppler effect / Optical excitation / Semiconductor plasma
Paper # A・P2003-65,SAT2003-57,MW2003-71,OPE2003-58
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Committee SAT
Conference Date 2003/7/24(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Doppler Up-Shift of Frequency Using Optically Generated Plasma in Semiconductor Transmission Lines
Sub Title (in English)
Keyword(1) Frequency conversion
Keyword(2) Doppler effect
Keyword(3) Optical excitation
Keyword(4) Semiconductor plasma
1st Author's Name Bae JONGSUCK
1st Author's Affiliation Research Institute of Electrical Communication, Tohoku University()
2nd Author's Name Koji MIZUNO
2nd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 2003/7/24
Paper # A・P2003-65,SAT2003-57,MW2003-71,OPE2003-58
Volume (vol) vol.103
Number (no) 234
Page pp.pp.-
#Pages 6
Date of Issue