Presentation 2004/4/9
Impact of Grain Boundaries on Device Characteristics and Reliability in Low-Temperature Poly-Si Thin Film Transistors
Toshiaki Tsuchiya, Nobuo Sasaki,
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Abstract(in English) Field effect mobility and subthreshold slope dependences on temperature, and threshold voltage dependences on drain voltage in low-temperature poly-Si TFTs are shown, and the influence of the grain boundaries on the TFT device characteristics and floating body effects are discussed. Hot-carrier-induced device degradation mechanism and the impact of the grain boundaries on the hot carrier reliability in the TFTs are also discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TFT / grain boundary / hot carrier reliability / field effect mobility / subthreshold slope / floating body effects
Paper # ED2004-10,SDM2004-10,OME2004-10
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Committee ED
Conference Date 2004/4/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Impact of Grain Boundaries on Device Characteristics and Reliability in Low-Temperature Poly-Si Thin Film Transistors
Sub Title (in English)
Keyword(1) TFT
Keyword(2) grain boundary
Keyword(3) hot carrier reliability
Keyword(4) field effect mobility
Keyword(5) subthreshold slope
Keyword(6) floating body effects
1st Author's Name Toshiaki Tsuchiya
1st Author's Affiliation Interdisciplinary Faculty of Science and Engineering, Shimane University()
2nd Author's Name Nobuo Sasaki
2nd Author's Affiliation Silicon Technology Labs, Fujitsu Laboratories Ltd.
Date 2004/4/9
Paper # ED2004-10,SDM2004-10,OME2004-10
Volume (vol) vol.104
Number (no) 3
Page pp.pp.-
#Pages 6
Date of Issue