Presentation 2004/6/25
Key Technology Development for EUVL Mask Fabrication(Session A8 Nano-Lithography)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Jinho Ahn, Taegeun Kim, Seungyoon Lee,
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Abstract(in English) For the successful implementation of EUV lithography technology, defect-free high-reflectivity mask fabrication is one of the key issues. Due to the unique absorbing characteristics of EUV wavelength, EUV lithography system adopts reflective optics and the multilayer structure with half-wavelength period is the only possible reflecting solution. But this multilayer structure causes several technical burdens in many processing steps including deposition, defect inspection, defect repair and cleaning. This paper presents the research results related to these critical issues.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Extreme Ultraviolet / Lithography / Mask / Multipayer / Defect
Paper # ED2004-94,SDM2004-106
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Committee ED
Conference Date 2004/6/25(1days)
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Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Key Technology Development for EUVL Mask Fabrication(Session A8 Nano-Lithography)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Sub Title (in English)
Keyword(1) Extreme Ultraviolet
Keyword(2) Lithography
Keyword(3) Mask
Keyword(4) Multipayer
Keyword(5) Defect
1st Author's Name Jinho Ahn
1st Author's Affiliation Materials Science and Engineering, Hanyang University()
2nd Author's Name Taegeun Kim
2nd Author's Affiliation Materials Science and Engineering, Hanyang University
3rd Author's Name Seungyoon Lee
3rd Author's Affiliation currently with Himeji Institute of Technology
Date 2004/6/25
Paper # ED2004-94,SDM2004-106
Volume (vol) vol.104
Number (no) 154
Page pp.pp.-
#Pages 4
Date of Issue