| Presentation | 2004/6/24 Present Status and Future Prospects of SiC Power Devices(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Tsunenobu KIMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Through recent progress in SiC growth technology, various prototype SiC electronic devices have been realized. In particular, SiC is ideally suited for high-voltage and low-loss power devices which are used in power electronic systems such as power supply and motor control. 600 V SiC Schottky barrier diodes are now commercially available, and the next target is obviously high-performance SiC transistors like power MOSFETs. On the other hand, for very high voltage applications above 3 kV, SiC bipolar devices such as PiN diodes, thyristors, and IGBTs will be required, because the conductivity modulation effect can greatly suppress the increase of on-resistance for high-voltage devices. However, there still remain various issues which should be addressed, and fundamental understanding of process and device physics in SiC is very limited. ln the present paper, the author reviews crystal growth, material characterization, ion implantation, and MOS technologies in SiC. Recent development of SiC power devices and future prospects will be also presented. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon Carbide / Wide Bandgap Semiconductor / Power Devices / Schottky Barrier Diode / MOSFET |
| Paper # | ED2004-88,SDM2004-100 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Present Status and Future Prospects of SiC Power Devices(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | Silicon Carbide |
| Keyword(2) | Wide Bandgap Semiconductor |
| Keyword(3) | Power Devices |
| Keyword(4) | Schottky Barrier Diode |
| Keyword(5) | MOSFET |
| 1st Author's Name | Tsunenobu KIMOTO |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| Date | 2004/6/24 |
| Paper # | ED2004-88,SDM2004-100 |
| Volume (vol) | vol.104 |
| Number (no) | 153 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |