| Presentation | 2004/6/24 Al_2O_3-gate controlled AlGaN/GaN HFETs having thin AlGaN barrier layers(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) Tamotsu Hashizume, Sanguan Anantathanasarn, Eiichi Sano, Hideki Hasegawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An AI_20_3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al_<0.2>Ga_<0.8>N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with Schottky-gate devices, the Al_2O_3 IG device showed successful gate control of drain current up to V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / Al_2O_3 / HFET / insulated gate / normally-off |
| Paper # | ED2004-79,SDM2004-91 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2004/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al_2O_3-gate controlled AlGaN/GaN HFETs having thin AlGaN barrier layers(Session A6 Compound Semiconductor Devices III)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)) |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | Al_2O_3 |
| Keyword(4) | HFET |
| Keyword(5) | insulated gate |
| Keyword(6) | normally-off |
| 1st Author's Name | Tamotsu Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University() |
| 2nd Author's Name | Sanguan Anantathanasarn |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 3rd Author's Name | Eiichi Sano |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 4th Author's Name | Hideki Hasegawa |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| Date | 2004/6/24 |
| Paper # | ED2004-79,SDM2004-91 |
| Volume (vol) | vol.104 |
| Number (no) | 153 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |