Presentation 2004/6/4
Monolithic integration of UTC-PDs and HBTs using Be ion implantation
Norihide KASHIO, Shoji YAMAHATA, Minoru IDA, Kenji KURISHIMA, Takatomo ENOKI,
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Abstract(in English) Uni-traveling-carrier photodiodes (UTC-PDs) and InP heterojunction bipolar transistor (HBTs) have been monolithically integrated using Be ion implantation. UTC-PDs have been fabricated from the InP HBT layer structure using Be ion implantation and rapid thermal annealing (RTA). The UTC-PD exhibits good I-V characteristics. The ideality factor is 1.3 and the breakdown voltage is over 7 V. The 3-dB bandwidth is estimated to be over 40 GHz with a lightwave component analyzer. The fabricated HBT exhibits a β of 25, an f_t of 150 GHz, and an f_ of 250 GHz. There is no serious degradation of the HBT performance associated with the RTA used for the UTC-PD fabrication. Thus, Be ion implantation is a promising technology for integrating UTC-PDs and HBTs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Be ion implantatoin / InP / HBT / OEIC
Paper # ED2004-39
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Committee ED
Conference Date 2004/6/4(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Monolithic integration of UTC-PDs and HBTs using Be ion implantation
Sub Title (in English)
Keyword(1) Be ion implantatoin
Keyword(2) InP
Keyword(3) HBT
Keyword(4) OEIC
1st Author's Name Norihide KASHIO
1st Author's Affiliation NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation()
2nd Author's Name Shoji YAMAHATA
2nd Author's Affiliation NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation:(Present address)Advanced Telecommunication Research Institute international
3rd Author's Name Minoru IDA
3rd Author's Affiliation NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
4th Author's Name Kenji KURISHIMA
4th Author's Affiliation NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
5th Author's Name Takatomo ENOKI
5th Author's Affiliation NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
Date 2004/6/4
Paper # ED2004-39
Volume (vol) vol.104
Number (no) 110
Page pp.pp.-
#Pages 5
Date of Issue