| Presentation | 2004/1/13 A High Reliability and High Gain InP-HEMT with Composite Channel Structure Shunsuke KURACHI, Yasunori NONAKA, Junichiro NIKAIDO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InP-based HEMTs excel in high frequency performances. On the other hand, many problems on reliability are reported because of impact ionization in the channel. We reduced the leakage current by impact ionization having best modified the channel structure. We conducted a reliability test which exceed 6000 hours after the modification, and the MTTF at 80℃ reached 2X10^7 hours . Fairly good reliability was realized. In addition, we improved the isolation of package, and achieved a noise figure of 0.28 dB and an associated gain of 16.5 dB at 12 GHz for a 200 μm gate-width. From the above results, it can safely be said that the InP-HEMT with Composite Channel Structure is considered promising as a low-noise device at more than the mm-wave band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP-HEMT / Impact ionization / High reliability / High gain / Composite Channel Structure |
| Paper # | ED2003-211 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2004/1/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Reliability and High Gain InP-HEMT with Composite Channel Structure |
| Sub Title (in English) | |
| Keyword(1) | InP-HEMT |
| Keyword(2) | Impact ionization |
| Keyword(3) | High reliability |
| Keyword(4) | High gain |
| Keyword(5) | Composite Channel Structure |
| 1st Author's Name | Shunsuke KURACHI |
| 1st Author's Affiliation | Fujitsu Quantum Devices Limited() |
| 2nd Author's Name | Yasunori NONAKA |
| 2nd Author's Affiliation | Fujitsu Quantum Devices Limited |
| 3rd Author's Name | Junichiro NIKAIDO |
| 3rd Author's Affiliation | Fujitsu Quantum Devices Limited |
| Date | 2004/1/13 |
| Paper # | ED2003-211 |
| Volume (vol) | vol.103 |
| Number (no) | 559 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |