| Presentation | 2004/1/13 1.2/2.4-GHz, 2.6/5.2-GHz-Band CMOS Frequency Doublers for Wireless Applications Kazuya YAMAMOTO, Tetsuya HEIMA, Hideyuki WAKADA, Tomohiro SANO, Hisayasu SATO, Kosei MAEMURA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes the design and experimental results for two types of CMOS frequency doublers (DBRs). One is for up-conversion from 1.2 GHz to 2.4 GHz, and the other is for up conversion from 2.6 to 5.2 GHz. These DBRs were fabricated using a standard 0.18-um bulk CMOS technology. The 1.2/2.4-GHz DBR with a differential input/output interface uses a drain-coupled, common source FET pair instead of a Gilbert-cell core in order to avoid a limited voltage headroom problem and obtain a large second harmonic voltage swing even under a 1.8-V low supply voltage condition. For the 2.6/5.2-GHz DBR, a current-reuse circuit-design technique is successfully incorporated into the DBR to realize both on chip input/output matching and adequate conversion gain with low current dissipation. This DBR with a single input/output interface features a bypass resistor placed between common ground and a source node of the second stage FET in the current-reuse topology, thereby improving conversion gain while saving waste current. The experimental results obtained under a 1.8-V supply voltage condition are as follows. For the 1.2/2.4-GHz DBR, a 0-dB conversion gain, less than -20 dB fundamental frequency leakage, and a 6-mA low current dissipation are achieved with a -2-dBm single channel input power. The 2.6/5.2 GHz DBR delivers a 2.7-dB maximum conversion gain and less than -20 dB fundamental frequency leakage with a 7-mA low current consumption under a -7-dBm low input power condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 2.4GHz / 5.2GHz / CMOS / Frequency doubler / Wireless communication |
| Paper # | ED2003-210 |
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| Committee | ED |
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| Conference Date | 2004/1/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1.2/2.4-GHz, 2.6/5.2-GHz-Band CMOS Frequency Doublers for Wireless Applications |
| Sub Title (in English) | |
| Keyword(1) | 2.4GHz |
| Keyword(2) | 5.2GHz |
| Keyword(3) | CMOS |
| Keyword(4) | Frequency doubler |
| Keyword(5) | Wireless communication |
| 1st Author's Name | Kazuya YAMAMOTO |
| 1st Author's Affiliation | High-Frequency & Optaical Device Works, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Tetsuya HEIMA |
| 2nd Author's Affiliation | Renesas Technology Corporation |
| 3rd Author's Name | Hideyuki WAKADA |
| 3rd Author's Affiliation | Renesas Technology Corporation |
| 4th Author's Name | Tomohiro SANO |
| 4th Author's Affiliation | Renesas Technology Corporation |
| 5th Author's Name | Hisayasu SATO |
| 5th Author's Affiliation | Renesas Technology Corporation |
| 6th Author's Name | Kosei MAEMURA |
| 6th Author's Affiliation | High-Frequency & Optaical Device Works, Mitsubishi Electric Corporation |
| Date | 2004/1/13 |
| Paper # | ED2003-210 |
| Volume (vol) | vol.103 |
| Number (no) | 559 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |