| Presentation | 2004/1/13 3.3V Operation 10Gb/s Preamplifier IC Using High-speed GaAs-MESFET Takashi SAWA, Sosaku SAWADA, Takeshi SEKIGUCHI, Masataka WATANABE, Daiji FUKUSHI, Shigeru NAKAJIMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, 10Gb/s PD preamplifier 1C is requested to can be implemented with coaxial package. Therefore high performance device and exact design technology are necessary in order to realize low supply power and low noise. We successfully obtained 0.18μm gate GaAs MESFETs with excellent uniformity and reproducibility using i-line lithography and ion-implantation that established as a mass production technique. Moreover the design is optimized in consideration of influence of parasitic element. Experimental results are very good as sensitivity of -20.1dBm, 3.3V operation, and 0.18W power. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAsIC / MESFET |
| Paper # | ED2003-209 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2004/1/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 3.3V Operation 10Gb/s Preamplifier IC Using High-speed GaAs-MESFET |
| Sub Title (in English) | |
| Keyword(1) | GaAsIC |
| Keyword(2) | MESFET |
| 1st Author's Name | Takashi SAWA |
| 1st Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD.() |
| 2nd Author's Name | Sosaku SAWADA |
| 2nd Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 3rd Author's Name | Takeshi SEKIGUCHI |
| 3rd Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 4th Author's Name | Masataka WATANABE |
| 4th Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 5th Author's Name | Daiji FUKUSHI |
| 5th Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 6th Author's Name | Shigeru NAKAJIMA |
| 6th Author's Affiliation | Transmission Device R&D Laboratories, SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| Date | 2004/1/13 |
| Paper # | ED2003-209 |
| Volume (vol) | vol.103 |
| Number (no) | 559 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |