Presentation 2003/12/5
Transfer Metal Mold Field Emitter Arrays
Masayuki Nakamoto, Katsuyoshi Fukuda, Masaki Higa,
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Abstract(in English) The Advanced Transfer Metal Mold emitter fabrication technique has been developed for getting sharp, uniform, low operation voltage and low-FEAs by using the ultra precision machining, the microelectroplating, and the mechanical pressing. The molds are fabricated by Ni electroplating. The Advanced Transfer Metal Mold FEAs are fabricated by the mechanical pressing using Ni Metal Mold and organic resin sheets such as polyimide sheets. Tip radii of the Advanced Transfer Metal Mold organic resin FEAs are 18nm-50nm, depending on the press pressure and the press temperature. I-V characteristics and F-N plots of the Advanced Transfer Metal Mold organic resign FEAs show the electron emissions are caused by field emission mechanisum, and exhibit low turn-on voltage value of 8 V/μm as well as the other Transfer Metal Mold FEAs. The Advanced Transfer Metal Mold technique is appropriate for fabricating sharp, uniform, low operation voltage, lower-cost and highly integrated large area FEAs.
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Keyword(in English) Field Emitter Arrays / Vacuum Nanoelectronics / FEA
Paper # ED2003-181
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Conference Information
Committee ED
Conference Date 2003/12/5(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Transfer Metal Mold Field Emitter Arrays
Sub Title (in English)
Keyword(1) Field Emitter Arrays
Keyword(2) Vacuum Nanoelectronics
Keyword(3) FEA
1st Author's Name Masayuki Nakamoto
1st Author's Affiliation Corporate R&D Center, Toshiba Corporation()
2nd Author's Name Katsuyoshi Fukuda
2nd Author's Affiliation Corporate R&D Center, Toshiba Corporation
3rd Author's Name Masaki Higa
3rd Author's Affiliation Corporate Manufacturing Engineering Center, Toshiba Corporation
Date 2003/12/5
Paper # ED2003-181
Volume (vol) vol.103
Number (no) 497
Page pp.pp.-
#Pages 4
Date of Issue