| Presentation | 2003/12/5 Hafnium Carbide Coated Poly-crystalline Silicon Field Emitter Array Masayoshi NAGAO, Yutaka SACHO, Seigo KANEMARU, Takanobu SATO, Takashi MATSUKAWA, Junji ITOH, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The HfC coated polycrystalline silicon (poly-Si) field emitter arrays (FEAs) were fabricated on an oxidized silicon wafer. The HfC coating layer was deposited by inductively coupled plasma assisted magnetron sputtering. The effect of the HfC thickness on the emission characteristics was investigated by depositing 15 nm and 30 nm thick HfC on the tip. The thinner HfC could effectively improve the emission characteristics of poly-Si FEA, while the thicker one degrades the emission. The methods of tip sharpening process were also investigated; one is thermal oxidation sharpening that is commonly used for the Si FEA fabrication, the other is Ar ion sputtering. The apex radius of the thermally oxidized FEA was much smaller than that of sputter sharpened one. However, some irregular shaped tips were found in the oxidized FEA that is responsible to gate current. The detailed fabrication and emission characteristics including gate current win be reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Vacuum nanoelectronics / Field emitter array / Field emission display / Poly-crystalline silicon / Hafnium carbide / surface modification |
| Paper # | ED2003-180 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hafnium Carbide Coated Poly-crystalline Silicon Field Emitter Array |
| Sub Title (in English) | |
| Keyword(1) | Vacuum nanoelectronics |
| Keyword(2) | Field emitter array |
| Keyword(3) | Field emission display |
| Keyword(4) | Poly-crystalline silicon |
| Keyword(5) | Hafnium carbide |
| Keyword(6) | surface modification |
| 1st Author's Name | Masayoshi NAGAO |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology() |
| 2nd Author's Name | Yutaka SACHO |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| 3rd Author's Name | Seigo KANEMARU |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| 4th Author's Name | Takanobu SATO |
| 4th Author's Affiliation | Institute of Applied Physics University of Tsukuba |
| 5th Author's Name | Takashi MATSUKAWA |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| 6th Author's Name | Junji ITOH |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology |
| Date | 2003/12/5 |
| Paper # | ED2003-180 |
| Volume (vol) | vol.103 |
| Number (no) | 497 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |