| Presentation | 2003/5/9 Power Amplifier using Combined SiGe HBTs with and without Selectively Ion Implanted Collector Atsuhiko KANDA, Toshinobu MATSUNO, Tsuyoshi TANAKA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present a novel two-stage SiGe hetero-bipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. In order to achieve the high gain, the selectively ion implanted collector (SIC) structure was employed for the first stage HBT, while non-SIC structure was used for the second stage HBT to achieve a high breakdown voltage. At 1.95GHz, the total PAE of 31% and a gain of 28dB with an output power (Pout) of 26dBm were obtained while the adjacent channel power ratio (ACPR) was less than-38dBc. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiGe HBT / Power Amplifier / Selectively ion implanted Collector / High Break down Voltage |
| Paper # | ED2003-49 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Power Amplifier using Combined SiGe HBTs with and without Selectively Ion Implanted Collector |
| Sub Title (in English) | |
| Keyword(1) | SiGe HBT |
| Keyword(2) | Power Amplifier |
| Keyword(3) | Selectively ion implanted Collector |
| Keyword(4) | High Break down Voltage |
| 1st Author's Name | Atsuhiko KANDA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor, Company Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Toshinobu MATSUNO |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor, Company Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Tsuyoshi TANAKA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor, Company Matsushita Electric Industrial Co., Ltd. |
| Date | 2003/5/9 |
| Paper # | ED2003-49 |
| Volume (vol) | vol.103 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |