Presentation 2003/5/9
Preparation of ultra-high B doped Si/GeB superlattice structure and its thermoelectoric properties
Masahiro Kitai, Takaharu Ikeda, Kimihiro Sasaki, Tomonobu Hata, Shinichi Morita,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have been growing Si/GeB superlattice structure by ion beam sputtering, and investigate its thermoelectric properties. First, to search the condition that generates large Seebeck coefficient at atmospheric temperature, we carried out to prepare Si/GeB films with changing the substrate temperature and substrate. On substrate temperature dependence, Si/GeB superlattice structure deposited at room temperature showed the largest Seebeck coefficient. However, at substrate temperature at 500℃, the Seebeck coefficient decreased rapidly. Next, Si/GeB superlattice structure was grown on SiO_2, which can prevent epitaxial growth. Its thermoelectric properties showed same properties as that on Si (100). Thus, superlattice structure itself increased Seebeck coefficient, and epitaxial growth was not always necessary.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ion beam sputtering / Si-GeB / Seebeck coefficient / thermoelectric properties
Paper # ED2003-48
Date of Issue

Conference Information
Committee ED
Conference Date 2003/5/9(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of ultra-high B doped Si/GeB superlattice structure and its thermoelectoric properties
Sub Title (in English)
Keyword(1) ion beam sputtering
Keyword(2) Si-GeB
Keyword(3) Seebeck coefficient
Keyword(4) thermoelectric properties
1st Author's Name Masahiro Kitai
1st Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University()
2nd Author's Name Takaharu Ikeda
2nd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
3rd Author's Name Kimihiro Sasaki
3rd Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
4th Author's Name Tomonobu Hata
4th Author's Affiliation Graduate School of Natural Science & Technology Kanazawa University
5th Author's Name Shinichi Morita
5th Author's Affiliation IHI Aero Space Corporation
Date 2003/5/9
Paper # ED2003-48
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 5
Date of Issue