Presentation 2003/5/9
Thermal Agglomeration of Ultrathin SOI Structures and Effect of the Patterning
Yasuhiko ISHIKAWA, Yasuhiro IMAI, Ratno NURYADI, Hiroya IKEDA, Michiharu TABE,
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Abstract(in English) Thermal agglomeration of ultrathin SOI (silicon-on-insulator) structures and effect of the patterning are studied. Annealing an ultrathin (001) SOI layer with the thickness below -10 nm in ultrahigh vacuum, the SOI layer deforms into Si islands with an ordered alignment in the <310> directions. In contrast, a line-patterned SOI layer, having the small line width (< 1μm) and thickness (~3nm), shows an alignment along the line edges, being independent of the in-plane crystalline directions. For the larger width and thickness, the alignment is not clear, reflecting a mixture of the above two alignments.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / Thermal Agglomeration / Si Island / Patterning / Alignment
Paper # ED2003-47
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Committee ED
Conference Date 2003/5/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal Agglomeration of Ultrathin SOI Structures and Effect of the Patterning
Sub Title (in English)
Keyword(1) SOI
Keyword(2) Thermal Agglomeration
Keyword(3) Si Island
Keyword(4) Patterning
Keyword(5) Alignment
1st Author's Name Yasuhiko ISHIKAWA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Yasuhiro IMAI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Ratno NURYADI
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Hiroya IKEDA
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Michiharu TABE
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2003/5/9
Paper # ED2003-47
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 5
Date of Issue