Presentation 2003/5/9
Ferroelectric Thin Films on Epitaxial γ-Al_2O_3/Si Substrates
Daisuke Akai, Mikako Yokawa, Keisuke Hirabayashi, Kazuaki Sawada, Makoto Ishida,
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Abstract(in English) MF (M) IS structures were fabricated using epitaxial y-Al_2O_3/ Si substrate. Y-Al_2O_3 films were grown by chemical vapor deposition method and ferroelectric films. Pb (Zr, Ti) O_3 (PZT) were deposited by sol-gel method. In the MFIS structures, highly (001)-oriented PZT films were obtained and γ-Al_2O_3 layers were prevented interface reactions between ferroelectric materials and Si substrates. On the other hand MFMIS structures were successfully formed using Pt bottom electrodes. Using the γ-Al_2O_3 layer as an insulator, the P-E hysteresis loop was observed with remnant polarization of 14.3 μC/cm^2 and coercive field of 50 kV/cm.
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Keyword(in English) γ-Al_2O_3 / Ferroelectric / MFIS / MFMIS
Paper # ED2003-44
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Committee ED
Conference Date 2003/5/9(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ferroelectric Thin Films on Epitaxial γ-Al_2O_3/Si Substrates
Sub Title (in English)
Keyword(1) γ-Al_2O_3
Keyword(2) Ferroelectric
Keyword(3) MFIS
Keyword(4) MFMIS
1st Author's Name Daisuke Akai
1st Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology()
2nd Author's Name Mikako Yokawa
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
3rd Author's Name Keisuke Hirabayashi
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
4th Author's Name Kazuaki Sawada
4th Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
5th Author's Name Makoto Ishida
5th Author's Affiliation Department of Electrical and Electronic Engineering, Toyohashi University of Technology
Date 2003/5/9
Paper # ED2003-44
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 5
Date of Issue