Presentation 2003/5/9
Lattice Distortion near Insulator-Semiconductor Interface due to Surface Treatment of Bias Sputtering
Yasunori YOSHIDA, Koichi AKIMOTO, Ayahiko ICHIMIYA, Takashi ENOMOTO, Satoshi KIKUCHI, Kazuo ITAGAKI, Hideo MAMITA,
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Abstract(in English) III-V compound semiconductors are the basis of semiconductor lasers and optoelectronic devices. In device technology, bias sputtering on a semiconductor surface is often used as a surface cleaning technique. In this study, we observed strain fields near InGaP or GaAs surfaces due to such bias sputtering of Ar ion.
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Keyword(in English) Interface / Strain / Synchrotron Radiation / X-Ray diffraction
Paper # ED2003-43
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Committee ED
Conference Date 2003/5/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Lattice Distortion near Insulator-Semiconductor Interface due to Surface Treatment of Bias Sputtering
Sub Title (in English)
Keyword(1) Interface
Keyword(2) Strain
Keyword(3) Synchrotron Radiation
Keyword(4) X-Ray diffraction
1st Author's Name Yasunori YOSHIDA
1st Author's Affiliation Dept. Quantum Engineering, Nagoya University()
2nd Author's Name Koichi AKIMOTO
2nd Author's Affiliation Dept. Quantum Engineering, Nagoya University
3rd Author's Name Ayahiko ICHIMIYA
3rd Author's Affiliation Dept. Quantum Engineering, Nagoya University
4th Author's Name Takashi ENOMOTO
4th Author's Affiliation Dept. of Physics, Toyota National College of Technology
5th Author's Name Satoshi KIKUCHI
5th Author's Affiliation Tsukuba Plant, Mitsubishi Chemical Corp.
6th Author's Name Kazuo ITAGAKI
6th Author's Affiliation Tsukuba Plant, Mitsubishi Chemical Corp.
7th Author's Name Hideo MAMITA
7th Author's Affiliation Tsukuba Laboratory, CACs. Inc.
Date 2003/5/9
Paper # ED2003-43
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 4
Date of Issue