Presentation | 2003/5/9 Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy Daina INOUE, Hidenobu Maki, Takahiro MORI, Kazuo OGAWA, Atsushi KOIZUMI, Taketoshi YOSHIKANE, Masao TABUCHI, Yasufumi FUJIWARA, Yoshikazu TAKEDA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Er doped GaAs (GaAs: Er) was demonstrated to show stronger photoluminescence (PL) emission at around 1.5μm by low-temperature molecular-beam epitaxy (LT-MBE). In this study we have investigated that Er-related PL intensity was increased by AlGaAs/GaAs: Er/AlGaAs structure at a low temperature. We have also observed Er luminescence in GaAs by current injection at room temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | MBE / rare-earth / GaAs / Er / low-temperature growth / LED |
Paper # | ED2003-40 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2003/5/9(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy |
Sub Title (in English) | |
Keyword(1) | MBE |
Keyword(2) | rare-earth |
Keyword(3) | GaAs |
Keyword(4) | Er |
Keyword(5) | low-temperature growth |
Keyword(6) | LED |
1st Author's Name | Daina INOUE |
1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University() |
2nd Author's Name | Hidenobu Maki |
2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
3rd Author's Name | Takahiro MORI |
3rd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
4th Author's Name | Kazuo OGAWA |
4th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
5th Author's Name | Atsushi KOIZUMI |
5th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
6th Author's Name | Taketoshi YOSHIKANE |
6th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
7th Author's Name | Masao TABUCHI |
7th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
8th Author's Name | Yasufumi FUJIWARA |
8th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
9th Author's Name | Yoshikazu TAKEDA |
9th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University |
Date | 2003/5/9 |
Paper # | ED2003-40 |
Volume (vol) | vol.103 |
Number (no) | 47 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |