Presentation 2003/5/9
Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy
Daina INOUE, Hidenobu Maki, Takahiro MORI, Kazuo OGAWA, Atsushi KOIZUMI, Taketoshi YOSHIKANE, Masao TABUCHI, Yasufumi FUJIWARA, Yoshikazu TAKEDA,
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Abstract(in English) Er doped GaAs (GaAs: Er) was demonstrated to show stronger photoluminescence (PL) emission at around 1.5μm by low-temperature molecular-beam epitaxy (LT-MBE). In this study we have investigated that Er-related PL intensity was increased by AlGaAs/GaAs: Er/AlGaAs structure at a low temperature. We have also observed Er luminescence in GaAs by current injection at room temperature.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MBE / rare-earth / GaAs / Er / low-temperature growth / LED
Paper # ED2003-40
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Committee ED
Conference Date 2003/5/9(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Er-doped GaAs/AlGaAs DH structure and light emitting diode by low-temperature molecular-beam epitaxy
Sub Title (in English)
Keyword(1) MBE
Keyword(2) rare-earth
Keyword(3) GaAs
Keyword(4) Er
Keyword(5) low-temperature growth
Keyword(6) LED
1st Author's Name Daina INOUE
1st Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University()
2nd Author's Name Hidenobu Maki
2nd Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
3rd Author's Name Takahiro MORI
3rd Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
4th Author's Name Kazuo OGAWA
4th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
5th Author's Name Atsushi KOIZUMI
5th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
6th Author's Name Taketoshi YOSHIKANE
6th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
7th Author's Name Masao TABUCHI
7th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
8th Author's Name Yasufumi FUJIWARA
8th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
9th Author's Name Yoshikazu TAKEDA
9th Author's Affiliation Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University
Date 2003/5/9
Paper # ED2003-40
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 6
Date of Issue