Presentation 2003/5/9
Molecular Beam Epitaxial Growth and Characterization of InGaAsSb Quantum well structures on InP for lasers operating at 2μm wavelength region
Yuichi KAWAMURA, Masanobu AMANO, Kazuhiro OUCHI, Naohisa INOUE,
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Abstract(in English) Molecular beam epitaxial growth and characterization of InGaAsSb quantum well structures on InP are described. Laser operation using this material system was obtained at low temperature.
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Keyword(in English) 2μm wavelenght laser / InGaAsSb / InP / molecular beam epitaxy
Paper # ED2003-38
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Committee ED
Conference Date 2003/5/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Molecular Beam Epitaxial Growth and Characterization of InGaAsSb Quantum well structures on InP for lasers operating at 2μm wavelength region
Sub Title (in English)
Keyword(1) 2μm wavelenght laser
Keyword(2) InGaAsSb
Keyword(3) InP
Keyword(4) molecular beam epitaxy
1st Author's Name Yuichi KAWAMURA
1st Author's Affiliation RIAST, Osaka Prefecture University()
2nd Author's Name Masanobu AMANO
2nd Author's Affiliation RIAST, Osaka Prefecture University
3rd Author's Name Kazuhiro OUCHI
3rd Author's Affiliation RIAST, Osaka Prefecture University
4th Author's Name Naohisa INOUE
4th Author's Affiliation RIAST, Osaka Prefecture University
Date 2003/5/9
Paper # ED2003-38
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 6
Date of Issue