Presentation | 2003/5/9 Molecular Beam Epitaxial Growth and Characterization of InGaAsSb Quantum well structures on InP for lasers operating at 2μm wavelength region Yuichi KAWAMURA, Masanobu AMANO, Kazuhiro OUCHI, Naohisa INOUE, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Molecular beam epitaxial growth and characterization of InGaAsSb quantum well structures on InP are described. Laser operation using this material system was obtained at low temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 2μm wavelenght laser / InGaAsSb / InP / molecular beam epitaxy |
Paper # | ED2003-38 |
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Committee | ED |
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Conference Date | 2003/5/9(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Molecular Beam Epitaxial Growth and Characterization of InGaAsSb Quantum well structures on InP for lasers operating at 2μm wavelength region |
Sub Title (in English) | |
Keyword(1) | 2μm wavelenght laser |
Keyword(2) | InGaAsSb |
Keyword(3) | InP |
Keyword(4) | molecular beam epitaxy |
1st Author's Name | Yuichi KAWAMURA |
1st Author's Affiliation | RIAST, Osaka Prefecture University() |
2nd Author's Name | Masanobu AMANO |
2nd Author's Affiliation | RIAST, Osaka Prefecture University |
3rd Author's Name | Kazuhiro OUCHI |
3rd Author's Affiliation | RIAST, Osaka Prefecture University |
4th Author's Name | Naohisa INOUE |
4th Author's Affiliation | RIAST, Osaka Prefecture University |
Date | 2003/5/9 |
Paper # | ED2003-38 |
Volume (vol) | vol.103 |
Number (no) | 47 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |