| Presentation | 2003/5/9 Growth sequence dependence of threshold current density in GaInP/GaAs/GaInP laser diodes Taketoshi YOSHIKANE, Atsushi KOIZUMI, Yasufumi FUJIWARA, Akira URAKAMI, Kentaro INOUE, Yoshikazu TAKEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is well known that high-quality GaAs/GaInP interfaces are difficult to be grown by organometallic vapor phase epitaxy (OMVPE), because a lower-bandgap interlayer is formed because of the intermixing of P and As atoms at the heterointerfaces and/or In memory effect. 77K photoluminescence (PL) measurements revealed that a broad peak due to the interlayer, appearing at around 900 nm, originates from a GaAs-on-GaInP interface. The interlayer-related PL peak is suppressed completely by growing the GaAs-on-GaInP interface at temperatures 550℃ or below. By applying this sequence for GaInP/GaAs/GaInP laser diodes, threshold current density is lower and more uniform than that of the higher growth temperature diodes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | photoluminescence / laser diode / GaAs / GaInP / heterointerface |
| Paper # | ED2003-37 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth sequence dependence of threshold current density in GaInP/GaAs/GaInP laser diodes |
| Sub Title (in English) | |
| Keyword(1) | photoluminescence |
| Keyword(2) | laser diode |
| Keyword(3) | GaAs |
| Keyword(4) | GaInP |
| Keyword(5) | heterointerface |
| 1st Author's Name | Taketoshi YOSHIKANE |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering() |
| 2nd Author's Name | Atsushi KOIZUMI |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering |
| 3rd Author's Name | Yasufumi FUJIWARA |
| 3rd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering |
| 4th Author's Name | Akira URAKAMI |
| 4th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering |
| 5th Author's Name | Kentaro INOUE |
| 5th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering |
| 6th Author's Name | Yoshikazu TAKEDA |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering |
| Date | 2003/5/9 |
| Paper # | ED2003-37 |
| Volume (vol) | vol.103 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |