Presentation 2003/5/9
GaAs/AlGaAs quantum well growth on patterned GaAs substrate by MBE
Yoshio NISHIMOTO, Masahito YAMAGUCHI, obuhiko SAWAKI,
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Abstract(in English) We grew GaAs/AlGaAs quantum well (QW) structures on two kinds of stripe-patterned structure simultaneously by molecular beam epitaxy methods. The employed stripe structures were fabricated on GaAs (100) substrate by photolithography and wet chemical etching. The stripe widths were 1 μm and 3 μm, and etching depth was 300 nm. The grown QW thickness estimated from the cathode luminescence spectra were 8 nm and 6.9 nm and the 1 μm and 3 μm stripes, respectively. This difference of thickness is due to the Ga adatoms surface diffusion from the (111) facets to the (100) surface. In 3 μm stripes on the QW thickness at the edge of the (100) surface is thicker than at the center. Therefore, we estimated the diffusion length of Ga adatoms on the surface less than 3 μm.
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Keyword(in English) GaAs / MBE method / Patterned substrates / quantum well structure / facet
Paper # ED2003-36
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Committee ED
Conference Date 2003/5/9(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) GaAs/AlGaAs quantum well growth on patterned GaAs substrate by MBE
Sub Title (in English)
Keyword(1) GaAs
Keyword(2) MBE method
Keyword(3) Patterned substrates
Keyword(4) quantum well structure
Keyword(5) facet
1st Author's Name Yoshio NISHIMOTO
1st Author's Affiliation Department of Electronics, Graduate School of Engineering, Nagoya University()
2nd Author's Name Masahito YAMAGUCHI
2nd Author's Affiliation Department of Electronics, Graduate School of Engineering, Nagoya University
3rd Author's Name obuhiko SAWAKI
3rd Author's Affiliation Department of Electronics, Graduate School of Engineering, Nagoya University
Date 2003/5/9
Paper # ED2003-36
Volume (vol) vol.103
Number (no) 47
Page pp.pp.-
#Pages 6
Date of Issue