| Presentation | 2003/5/9 Fabrication and Application of InAs quantum dots by droplet-hetero epitaxy on GaInAsP and AlInAs lattice-matched with InP substrates Woo-Sik LEE, Ryo OGA, Yoshihiro YOSHIDA, Yasufumi FUJIWARA, Yoshikazu TAKEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have obtained InAs quantum dots (QDs) by droplet-hetero epitaxy on GalnAsP and AlInAs lattice-matched with InP (001) substrates. The growth of InAs QDs has been investigated as a function of TMIn supply time for formation of In droplets. The growth feature of InAs dots on GaInAsP or AlInAs was quite different from that on InP. Together with small InAs QDs, large dots were also formed by coalescence of small QDs for all the supply times on InP. The coalescence was suppressed on GaInAsP or AlInAs in a short supply time. As a result, we successfully obtained only small dots without large dots. Emission due to InAs QDs was observed in photoluminescence (PL) and electroluminescence (EL) measurements at room temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Droplet epitaxy / GaInAsP / AlInAs / InAs quantum dot |
| Paper # | ED2003-35 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Application of InAs quantum dots by droplet-hetero epitaxy on GaInAsP and AlInAs lattice-matched with InP substrates |
| Sub Title (in English) | |
| Keyword(1) | Droplet epitaxy |
| Keyword(2) | GaInAsP |
| Keyword(3) | AlInAs |
| Keyword(4) | InAs quantum dot |
| 1st Author's Name | Woo-Sik LEE |
| 1st Author's Affiliation | Department of Materials Science and Engineering,Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Ryo OGA |
| 2nd Author's Affiliation | Department of Materials Science and Engineering,Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Yoshihiro YOSHIDA |
| 3rd Author's Affiliation | Department of Materials Science and Engineering,Graduate School of Engineering, Nagoya University |
| 4th Author's Name | Yasufumi FUJIWARA |
| 4th Author's Affiliation | Department of Materials Science and Engineering,Graduate School of Engineering, Nagoya University |
| 5th Author's Name | Yoshikazu TAKEDA |
| 5th Author's Affiliation | Department of Materials Science and Engineering,Graduate School of Engineering, Nagoya University |
| Date | 2003/5/9 |
| Paper # | ED2003-35 |
| Volume (vol) | vol.103 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |