| Presentation | 2003/5/9 Radiation-induced damage and annealing effect in CuInSe_2 thin films Satoshi NATSUME, Naoki FUJITA, Hae-Seok LEE, Hiroshi OKADA, Akihiro WAKAHARA, Akira YOSHIDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High energty proton and electron irradiation damage and annealing effects in CuInSe_2 thin film were investigated. Single Crystal and Polycrystalline CuInSe_2 thin films were grown on semi-insulating GaAs (001) and quartz substrates by RF sputtering. Electrical properties of irradiated films were characterized by van der Pauw method. Decrease of carrier concentration was seen in both electron- and proton-irradiated samples. In proton-irradiated samples with large acceleration energy, carrier removal rate becomes small. In order to investigate recovery of the defects, annealing of CuInSe_2 films was performed. As a result, increase of carrier concentration was seen in irradiated CuInSe_2 Films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CuInSe_2 / electron irradiation / proton irradiation / annealing effect / space solar cell |
| Paper # | ED2003-33 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/5/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Radiation-induced damage and annealing effect in CuInSe_2 thin films |
| Sub Title (in English) | |
| Keyword(1) | CuInSe_2 |
| Keyword(2) | electron irradiation |
| Keyword(3) | proton irradiation |
| Keyword(4) | annealing effect |
| Keyword(5) | space solar cell |
| 1st Author's Name | Satoshi NATSUME |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology() |
| 2nd Author's Name | Naoki FUJITA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 3rd Author's Name | Hae-Seok LEE |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 4th Author's Name | Hiroshi OKADA |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 5th Author's Name | Akihiro WAKAHARA |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| 6th Author's Name | Akira YOSHIDA |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Toyohashi University of Technology |
| Date | 2003/5/9 |
| Paper # | ED2003-33 |
| Volume (vol) | vol.103 |
| Number (no) | 47 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |