Presentation 2003/4/8
Growth of Clusters in Silane Plasmas and Their Relation to Deposition of Thin Films
M. SHIRATANI, K. KOGA, T. OGATA, T. KAKEYA, N. KAGUCHI, Y. WATANABE,
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Abstract(in English) Cluster amount in silane plasmas employed for a-Si:H deposition can be reduced significantly by increasing discharging frequency or diluting with H_2 gas. Reduction of cluster amount brings about the decrease in a microstructure parameter of a-Si:H films, leading to the increase in a high fill factor.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cluster / Amorphous Silicon / Silane Plasma / Crystal Nano-Cluster
Paper # ED2003-14,SDM2003-14,OME2003-14
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Committee ED
Conference Date 2003/4/8(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of Clusters in Silane Plasmas and Their Relation to Deposition of Thin Films
Sub Title (in English)
Keyword(1) Cluster
Keyword(2) Amorphous Silicon
Keyword(3) Silane Plasma
Keyword(4) Crystal Nano-Cluster
1st Author's Name M. SHIRATANI
1st Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University()
2nd Author's Name K. KOGA
2nd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
3rd Author's Name T. OGATA
3rd Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
4th Author's Name T. KAKEYA
4th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
5th Author's Name N. KAGUCHI
5th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
6th Author's Name Y. WATANABE
6th Author's Affiliation Graduate School of Information Science and Electrical Engineering, Kyushu University
Date 2003/4/8
Paper # ED2003-14,SDM2003-14,OME2003-14
Volume (vol) vol.103
Number (no) 4
Page pp.pp.-
#Pages 5
Date of Issue