Presentation	2003/9/26 MOVPE Growth and Characterization of High-Al-Content Al_xGa_<1-x>N/GaN HEMT Layers on 100-mm-diameter Sapphire Substrates Makoto MIYOSHI, Masahiro SAKAI, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JINBO, Mitsuhiro TANAKA, Osamu ODA, Hiroyuki KATSUKAWA,
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Abstract(in English)	For the practical use and the high-power applications of GaN-based electronic devices, we examined the growth of high-Al-content Al_xGa_<1-x>N/GaN (0.26 ≤ x_ ≤ 0.52) HEMT epitaxial layers on 100-mm-diameter sapphire substrates using a large-size MOVPE system. Good uniformity of alloy composition, within ±3% across the entire wafers, was successfully obtained with the highest x_ value of 0.52 under the optimized growth conditions of Al_xGa_<1-x>N layers. The sheet carrier concentration of the Al_<0.52>Ga_<0.48>N/GaN HEMT layer was as high as 1.75×10^<13>/cm^2 with the electron mobility of 971 cm^2/Vs at room temperature. The results of Hall effect measurement and the sheet resistance mapping using eddy current method indicated that the present HEMT layers have good uniformity of electrical properties across the entire 100-mm-diameter epitaxial wafers.
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Keyword(in English)	Al_xGa_<1-x>N-GaN HEMT / high-Al-content Al_xGa_<1-x>N / MOVPE / 100-mm-diameter sapphire substrates / uniformity
Paper #	ED2003-150,CPM2003-120,LQE2003-68
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Conference Information
Committee	ED
Conference Date	2003/9/26(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	MOVPE Growth and Characterization of High-Al-Content Al_xGa_<1-x>N/GaN HEMT Layers on 100-mm-diameter Sapphire Substrates
Sub Title (in English)
Keyword(1)	Al_xGa_<1-x>N-GaN HEMT
Keyword(2)	high-Al-content Al_xGa_<1-x>N
Keyword(3)	MOVPE
Keyword(4)	100-mm-diameter sapphire substrates
Keyword(5)	uniformity
1st Author's Name	Makoto MIYOSHI
1st Author's Affiliation	Research Center for Nano-Device and System, Nagoya Institute of Technology:NGK INSULATORS, LTD.()
2nd Author's Name	Masahiro SAKAI
2nd Author's Affiliation	Research Center for Nano-Device and System, Nagoya Institute of Technology:NGK INSULATORS, LTD.
3rd Author's Name	Hiroyasu ISHIKAWA
3rd Author's Affiliation	Research Center for Nano-Device and System, Nagoya Institute of Technology
4th Author's Name	Takashi EGAWA
4th Author's Affiliation	Research Center for Nano-Device and System, Nagoya Institute of Technology
5th Author's Name	Takashi JINBO
5th Author's Affiliation	Research Center for Nano-Device and System, Nagoya Institute of Technology
6th Author's Name	Mitsuhiro TANAKA
6th Author's Affiliation	NGK INSULATORS, LTD.
7th Author's Name	Osamu ODA
7th Author's Affiliation	NGK INSULATORS, LTD.
8th Author's Name	Hiroyuki KATSUKAWA
8th Author's Affiliation	NGK INSULATORS, LTD.
Date	2003/9/26
Paper #	ED2003-150,CPM2003-120,LQE2003-68
Volume (vol)	vol.103
Number (no)	342
Page	pp.pp.-
#Pages	5
Date of Issue