Presentation 2003/9/25
Fabrication of Nitride Semiconductor Vertical Microcavity LEDs and Prospects for Blue-Violet Vertical-Cavity Surface-Emitting Lasers
Munetaka ARITA, Masao NISHIOKA, Yasuhiko ARAKAWA,
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Abstract(in English) InGaN vertical microcavity light emitting diodes (LEDs) have been fabricated and characterized. Electrically conductive nitride n-type distributed Bragg reflectors (DBRs) with high reflectivity can be obtained by controlling growth conditions precisely. Furthermore, AlGaN/GaN superlattice-based DBRs in which cracking is suppressed have been successfully grown. Reflectivity of the superlattice DBRs were revealed to be as high as those of conventional DBRs. Effective hole current injection into the microacvity was realized by using indium-tin-oxide (ITO) as a p-type contact material. Microcavity effects were clearly observed in optical characteristics of the microcavity LEDs. At present, we have also achieved to grow nitride DBRs with higher reflectivity up to 99%, with which realization of blue-violet vertical-cavity surface-emitting lasers (VCSELs) can be expected.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / DBR / microcavity / LED / ITO / VCSEL
Paper # ED2003-143,CPM2003-113,LQE2003-61
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Committee ED
Conference Date 2003/9/25(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of Nitride Semiconductor Vertical Microcavity LEDs and Prospects for Blue-Violet Vertical-Cavity Surface-Emitting Lasers
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) DBR
Keyword(4) microcavity
Keyword(5) LED
Keyword(6) ITO
Keyword(7) VCSEL
1st Author's Name Munetaka ARITA
1st Author's Affiliation Research Center for Advanced Science and Technology, University of Tokyo()
2nd Author's Name Masao NISHIOKA
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo
3rd Author's Name Yasuhiko ARAKAWA
3rd Author's Affiliation Research Center for Advanced Science and Technology, University of Tokyo:Institute of Industrial Science, University of Tokyo
Date 2003/9/25
Paper # ED2003-143,CPM2003-113,LQE2003-61
Volume (vol) vol.103
Number (no) 341
Page pp.pp.-
#Pages 6
Date of Issue