講演名 | 2003/6/25 Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_<12>/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) , |
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抄録(英) | Ferroelectric gate FET's with (Bi, La)_4Ti_3O_<12> (BLT)/HfO_2 structure were fabricated and characterized. In this study, the memory devices were designed by using 0.8 μm design-rule and fabricated on 5-inch-size Si wafer with well-optimized CMOS compatible fabrication processes for the first time. We obtained excellent device characteristics and good memory operations of the fabricated n-ch and p-ch MFIS-FET's. We also confirmed by evaluating the gate voltage and gate size dependences of device properties that the fabricated devices showed quantitatively reasonable ferroelectric memory operations. It can be evidently suggested from the obtained results that the gate-stack of BLT/HfO_2 is one of the promising material combinations for MFIS-type ferroelectric memory devices. |
キーワード(和) | |
キーワード(英) | Ferroelectric-gate / Nonvolatile memory / HfO_2 / (Bi, La)_4Ti_3O_<12> (BLT) / MFIS |
資料番号 | ED2003-103,SDM2003-114 |
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研究会情報 | |
研究会 | ED |
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開催期間 | 2003/6/25(から1日開催) |
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申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
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サブタイトル(和) | |
タイトル(英) | Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_<12>/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) |
サブタイトル(和) | |
キーワード(1)(和/英) | / Ferroelectric-gate |
第 1 著者 氏名(和/英) | / Sung-Min YOON |
第 1 著者 所属(和/英) | Electronics & Telecommunications Research Institute (ETRI) |
発表年月日 | 2003/6/25 |
資料番号 | ED2003-103,SDM2003-114 |
巻番号(vol) | vol.103 |
号番号(no) | 161 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |