| Presentation | 2003/6/23 Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) Yong-Seong Kim, Soon-Won Jung, Sang-Hyun Jeong, Yong-Il In, Kwang-Ho Kim, Kwangsoo No, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferroelectric capacitors with LiNbO_3 film were fabricated using CSD method and demonstrated nonvolatile memory operations of the capacitors. C-axis oriented LiNbO_3 (006) peak was obtained from the prepared LiNbO_3/Pt/Ti/SiO_2/Si and LiNbO_3/p-Si (100) structures. At the annealing temperature of 800℃, the maximum LN (006) peak was observed. The capacitance in Pt/LiNbO_3/Pt/Ti/SiO_2/Si structure shows hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The dielectric constant of the LiNbO_3 films calculated from the capacitance at the accumulation region was about 27. Typical gate leakage current density of the MFS capacitor was the order of 10^<-7> A/cm^2 at the range of within ±300 kV/cm. The typical measured remnant polarization (2Pr) and coercive field (Ec) values were about 0.5μC/cm^2 and 115 kV/cm, resoectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CSD (Chemical Solution Decomposition) / LiNbO_3 / Ferroelectric / MFM / MFS / Gate leakage currents / remnant polarization |
| Paper # | ED2003-70,SDM2003-81 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) |
| Sub Title (in English) | |
| Keyword(1) | CSD (Chemical Solution Decomposition) |
| Keyword(2) | LiNbO_3 |
| Keyword(3) | Ferroelectric |
| Keyword(4) | MFM |
| Keyword(5) | MFS |
| Keyword(6) | Gate leakage currents |
| Keyword(7) | remnant polarization |
| 1st Author's Name | Yong-Seong Kim |
| 1st Author's Affiliation | Department of Semiconductor Engineering, Cheongju University() |
| 2nd Author's Name | Soon-Won Jung |
| 2nd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 3rd Author's Name | Sang-Hyun Jeong |
| 3rd Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 4th Author's Name | Yong-Il In |
| 4th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 5th Author's Name | Kwang-Ho Kim |
| 5th Author's Affiliation | Department of Semiconductor Engineering, Cheongju University |
| 6th Author's Name | Kwangsoo No |
| 6th Author's Affiliation | Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology |
| Date | 2003/6/23 |
| Paper # | ED2003-70,SDM2003-81 |
| Volume (vol) | vol.103 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |