| Presentation | 2003/6/23 Shallow Junction formed by UV Pulsed Laser Annealing for Si Micro-Electronics (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) Takashi NOGUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | UV (Ultra-Violet) laser annealing and relating subject is discussed for the application to Si MOS and SOI (Silicon on Insulator) transistors. In Si LSI, USJ (Ultra-Shallow Junction) of low sheet resistance is required in sub-0.1 μm MOS transistors in order to suppress a SCE (Short Channel Effect) with keeping high on current. ELA (Excimer Laser Annealing) by a uniform energy beam having high absorption rate for silicon layer in UV region is expected as a doping process for the USJ in Si micro-electronics as well as for AM-FPD using TFT. Correspondingly, an effective non-contact analysis for the activated thin junction layer without giving the damage to the Si surface is proposed and is discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | USJ / MOS / SOI / UV / Excimer laser |
| Paper # | ED2003-65,SDM2003-76 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/6/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Shallow Junction formed by UV Pulsed Laser Annealing for Si Micro-Electronics (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)) |
| Sub Title (in English) | |
| Keyword(1) | USJ |
| Keyword(2) | MOS |
| Keyword(3) | SOI |
| Keyword(4) | UV |
| Keyword(5) | Excimer laser |
| 1st Author's Name | Takashi NOGUCHI |
| 1st Author's Affiliation | School of Information and Communication Engineering, Sungyunkwan University:SAIT (Samsung Advanced Institute of Technology)() |
| Date | 2003/6/23 |
| Paper # | ED2003-65,SDM2003-76 |
| Volume (vol) | vol.103 |
| Number (no) | 159 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |