| Presentation | 2003/6/7 Fabrication of GaInAs/InP Buried Metal heterojunction bipolar transistors with a 0.1-μm-wide emitter Keigo YOKOYAMA, Koji MATSUDA, Toshiro NONAKA, Katuhiko TAKEUCHI, Yasuyuki MIYAMOTO, Kazuhito FURUYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | When GaInAs/InP heterojunction bipolar transistors (HBTs) with 0.1-μm-wide tungsten wires as collector were fabricated, we could not obtain the device operation when the number of the wire was single. The failure was due to insufficient buried growth because we did not pay attention to dependence of overgrown InP thickness on the number of wires. Poor reproducibility of wet etching for InP emitter mesa introduced the failure, also. By increase of the growth time adequate for a single wire and change of wet etching solution, the HBT with a single tungsten wire was fabricated. We observed transistor operation with current gain of 20 in the HBTs. The emitter area of the device was 0.1×0.5 μm^2. To our knowledge, this is smallest emitter are in a HBT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaInAs / InP / base-collector capacitance / HBT / MOVPE / overgrowth / wet etching |
| Paper # | ED2003-62 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/6/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaInAs/InP Buried Metal heterojunction bipolar transistors with a 0.1-μm-wide emitter |
| Sub Title (in English) | |
| Keyword(1) | GaInAs |
| Keyword(2) | InP |
| Keyword(3) | base-collector capacitance |
| Keyword(4) | HBT |
| Keyword(5) | MOVPE |
| Keyword(6) | overgrowth |
| Keyword(7) | wet etching |
| 1st Author's Name | Keigo YOKOYAMA |
| 1st Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Koji MATSUDA |
| 2nd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Toshiro NONAKA |
| 3rd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Katuhiko TAKEUCHI |
| 4th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Yasuyuki MIYAMOTO |
| 5th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology:CREST, Japan Science and Technology Corporation |
| 6th Author's Name | Kazuhito FURUYA |
| 6th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology:CREST, Japan Science and Technology Corporation:Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| Date | 2003/6/7 |
| Paper # | ED2003-62 |
| Volume (vol) | vol.103 |
| Number (no) | 118 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |