| Presentation | 2003/6/6 Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Al_2O_3/Si_3N_4 Gate Insulator Narihiko MAEDA, Takehiko TAWARA, Tadashi SAITO, Kotaro TSUNBAKI, Naoki KOBAYASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A novel AlGaN/GaN MIS HFET has been proposed, where (1) channel doping design and (2) Al_2O_3/Si_3N_4 bi-layer gate insulator are used. A fabricated device with a gate length of 1.5 μm has exhibited a state-off-the-art current density of 1.6 A/mm and a gm of 145 mS/mm with reduced gate leakage current, suggesting that the proposed MIS HFET is promising for high-power applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HFET / Channel Doping / MIS Structure / High Current Operation |
| Paper # | ED2003-51 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Al_2O_3/Si_3N_4 Gate Insulator |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HFET |
| Keyword(3) | Channel Doping |
| Keyword(4) | MIS Structure |
| Keyword(5) | High Current Operation |
| 1st Author's Name | Narihiko MAEDA |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Takehiko TAWARA |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | Tadashi SAITO |
| 3rd Author's Affiliation | NTT Basic Research Laboratories |
| 4th Author's Name | Kotaro TSUNBAKI |
| 4th Author's Affiliation | Dept. of Engineering, Toyo University |
| 5th Author's Name | Naoki KOBAYASHI |
| 5th Author's Affiliation | Dept. of Applied Physics and Chemistry, The University of Electro-Communications |
| Date | 2003/6/6 |
| Paper # | ED2003-51 |
| Volume (vol) | vol.103 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |