Presentation 2002/5/17
Deposition and characterization of SnS thin film by electrochemical deposition method with pulse voltage conditions
Naoya Sato, Masaya Ichimura, Eisuke Arai, Yoshihisa Yamazaki,
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Abstract(in English) To produce semiconductor thin films for solar cells with low cost, we deposited and characterized tin sulphide (SnS) thin films by the electrochemical deposition method (ECD). We applied pulse voltage to the substrate in ECD and characterized deposited samples by scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurement. And we optimized the pulse voltage condition to improve the adhesion to the substrate, the surface morphology and the crystallinity. Furthermore, we made mesa structures on the substrate, and confirmed the semiconductor-like characteristics from the temperature dependence of current-voltage (I-V) characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) electrochemical deposition method / tin sulphide(SnS) / pulse voltage / currentwoltage(I-V) measurements
Paper # ED2002-42
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Committee ED
Conference Date 2002/5/17(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deposition and characterization of SnS thin film by electrochemical deposition method with pulse voltage conditions
Sub Title (in English)
Keyword(1) electrochemical deposition method
Keyword(2) tin sulphide(SnS)
Keyword(3) pulse voltage
Keyword(4) currentwoltage(I-V) measurements
1st Author's Name Naoya Sato
1st Author's Affiliation Nagoya Institute of Technology()
2nd Author's Name Masaya Ichimura
2nd Author's Affiliation Nagoya Institute of Technology
3rd Author's Name Eisuke Arai
3rd Author's Affiliation Nagoya Institute of Technology
4th Author's Name Yoshihisa Yamazaki
4th Author's Affiliation Fuji Xerox Co., Ltd.
Date 2002/5/17
Paper # ED2002-42
Volume (vol) vol.102
Number (no) 77
Page pp.pp.-
#Pages 6
Date of Issue