| Presentation | 2002/5/17 Electroluminescence properties of Er,O-codoped GaAs/GaInP grown by OMVPE Atsushi KOIZUMI, Yasufumi FUJIWARA, Kentaro INOUE, Taketoshi YOSHIKANE, Yoshikazu TAKEDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInP/Er,O-codoped GaAs/GaInP light-emitting diodes (LED) have been grown by organometallic vapor phase epitaxy. Er,O-codoping was carried out with trisisopropylcyclopentadienylerbium (Er(i-PrCp)_3) as an Er source with an addition of ^18O_2. Er,O-codoped GaAs (GaAs:Er,O) and GaInP layers were all grown at 540℃ to prevent the formation of interface layers between GaAs and GaInP. In-depth profiles showed a uniform distribution of Er along the growth direction in the GaAs:Er,O active layer. The Er concentration in the GaAs:Er,O active layer was evaluated to be about 8 × 10^18 cm^-3 In room-temperature electroluminescence measurements, GaInP/GaAs:Er,O/GaInP LED exhibited sharp intra-4f shell 1.54 μm luminescence due to Er-2O centers. This suggests that injected carriers in the GaAs:Er,O active layer contribute to excitation of the Er-2O centers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Erbium / Oxygen / Electroluminescence / GaAs / GaInP |
| Paper # | ED2002-34 |
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| Committee | ED |
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| Conference Date | 2002/5/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electroluminescence properties of Er,O-codoped GaAs/GaInP grown by OMVPE |
| Sub Title (in English) | |
| Keyword(1) | Erbium |
| Keyword(2) | Oxygen |
| Keyword(3) | Electroluminescence |
| Keyword(4) | GaAs |
| Keyword(5) | GaInP |
| 1st Author's Name | Atsushi KOIZUMI |
| 1st Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering,Nagoya University() |
| 2nd Author's Name | Yasufumi FUJIWARA |
| 2nd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering,Nagoya University |
| 3rd Author's Name | Kentaro INOUE |
| 3rd Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering,Nagoya University |
| 4th Author's Name | Taketoshi YOSHIKANE |
| 4th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering,Nagoya University |
| 5th Author's Name | Yoshikazu TAKEDA |
| 5th Author's Affiliation | Department of Materials Science and Engineering, Graduate School of Engineering,Nagoya University |
| Date | 2002/5/17 |
| Paper # | ED2002-34 |
| Volume (vol) | vol.102 |
| Number (no) | 77 |
| Page | pp.pp.- |
| #Pages | 6 |
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