Presentation 2003/2/4
Cathodoluminescence In-Depth Spectroscopy Study of Yellow Luminescence in GaN
Fumitaro ISHIKAWA, Hideki HASEGAWA,
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Abstract(in English) Our CLIS technique combining a ID computer simulation was applied to characterize GaN with particular attention in so-called yellow luminescence (YL) center whose origin and fundamental properties have not amply been clarified up to now. As a result, it was suggested that the yellow luminescence is due to deep acceptor levels uniformly distributed in the GaN bulk where radiative transition from conduction band edge to deep acceptors. In addition, high density U-shaped surface states should exist on the surface of the GaN layer and it plays an important role in the overall recombination statistics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / Yellow Luminescence / Deep level / Cathodoluminescence / Depth-resolved characterization / Non-destructive characterization
Paper # ED2002-293
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Committee ED
Conference Date 2003/2/4(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Cathodoluminescence In-Depth Spectroscopy Study of Yellow Luminescence in GaN
Sub Title (in English)
Keyword(1) GaN
Keyword(2) Yellow Luminescence
Keyword(3) Deep level
Keyword(4) Cathodoluminescence
Keyword(5) Depth-resolved characterization
Keyword(6) Non-destructive characterization
1st Author's Name Fumitaro ISHIKAWA
1st Author's Affiliation Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering()
2nd Author's Name Hideki HASEGAWA
2nd Author's Affiliation Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering
Date 2003/2/4
Paper # ED2002-293
Volume (vol) vol.102
Number (no) 639
Page pp.pp.-
#Pages 6
Date of Issue