Presentation | 2003/2/4 Cathodoluminescence In-Depth Spectroscopy Study of Yellow Luminescence in GaN Fumitaro ISHIKAWA, Hideki HASEGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Our CLIS technique combining a ID computer simulation was applied to characterize GaN with particular attention in so-called yellow luminescence (YL) center whose origin and fundamental properties have not amply been clarified up to now. As a result, it was suggested that the yellow luminescence is due to deep acceptor levels uniformly distributed in the GaN bulk where radiative transition from conduction band edge to deep acceptors. In addition, high density U-shaped surface states should exist on the surface of the GaN layer and it plays an important role in the overall recombination statistics. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / Yellow Luminescence / Deep level / Cathodoluminescence / Depth-resolved characterization / Non-destructive characterization |
Paper # | ED2002-293 |
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Committee | ED |
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Conference Date | 2003/2/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Cathodoluminescence In-Depth Spectroscopy Study of Yellow Luminescence in GaN |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | Yellow Luminescence |
Keyword(3) | Deep level |
Keyword(4) | Cathodoluminescence |
Keyword(5) | Depth-resolved characterization |
Keyword(6) | Non-destructive characterization |
1st Author's Name | Fumitaro ISHIKAWA |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering() |
2nd Author's Name | Hideki HASEGAWA |
2nd Author's Affiliation | Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering |
Date | 2003/2/4 |
Paper # | ED2002-293 |
Volume (vol) | vol.102 |
Number (no) | 639 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |