| Presentation | 2003/1/10 High Breakdown Electric Field for Npn-type AlGaN/InGaN/GaN Heterojunction Bipolar Transistors Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 (V), corresponding to the breakdown electric field of 2.3 (MV/cm) in the collector. This value is comparable to the expected one for the wide bandgap of GaN (3.3 (MV/cm)). The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / Nitride semiconductors / p-InGaN / GaN / AlGaN / Breakdown voltage / MOVPE |
| Paper # | ED2002-270,MW2002-157 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Breakdown Electric Field for Npn-type AlGaN/InGaN/GaN Heterojunction Bipolar Transistors |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | Nitride semiconductors |
| Keyword(3) | p-InGaN |
| Keyword(4) | GaN |
| Keyword(5) | AlGaN |
| Keyword(6) | Breakdown voltage |
| Keyword(7) | MOVPE |
| 1st Author's Name | Toshiki Makimoto |
| 1st Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation() |
| 2nd Author's Name | Kazuhide Kumakura |
| 2nd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| 3rd Author's Name | Naoki Kobayashi |
| 3rd Author's Affiliation | NTT Basic Research Laboratories, NTT Corporation |
| Date | 2003/1/10 |
| Paper # | ED2002-270,MW2002-157 |
| Volume (vol) | vol.102 |
| Number (no) | 557 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |