| Presentation | 2003/1/9 Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability Takeshi KAWASAKI, Ryuji YAMABI, Kenji KOTANI, Masaki YANAGISAWA, Seiji YAEGASSI, Hiroshi YANO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have successfully developed an InP/InGaAs HBT fabrication process that shows high uniformity and high reliability of device characteristics. The device is a single-heterojunction bipolar transistor with InP passivation structure to reduce emitter-base leakage current. HBT mesas are formed only by wet chemical etching not to damage device characteristics. The HBT exhibits the current gain, cutoff frequency, and maximum oscillation frequency of 45.4, 151.1GHz, and 171.8GHz at a collector current density of 1 mA/μm^2, respectively. The uniformities of those parameters over a 3-inch diameter wafer are only 2.8%,2.6%, and 1.5%, respectively. The HBT has shown stable characteristics in life tests and we have obtained the activation energy of 1.5eV and mean time to failure of 5x10^6 hours at a junction temperature of 150℃, which is enouh for practical applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / Heterojunction Bipolar Transistor / InP / InGaAs / Uniformity / Reliability |
| Paper # | ED2002-255,MW2002-142 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2003/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | Heterojunction Bipolar Transistor |
| Keyword(3) | InP |
| Keyword(4) | InGaAs |
| Keyword(5) | Uniformity |
| Keyword(6) | Reliability |
| 1st Author's Name | Takeshi KAWASAKI |
| 1st Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd.() |
| 2nd Author's Name | Ryuji YAMABI |
| 2nd Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd. |
| 3rd Author's Name | Kenji KOTANI |
| 3rd Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd. |
| 4th Author's Name | Masaki YANAGISAWA |
| 4th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd. |
| 5th Author's Name | Seiji YAEGASSI |
| 5th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd. |
| 6th Author's Name | Hiroshi YANO |
| 6th Author's Affiliation | Optoelectronics R&D Labs., Sumitomo Electric Industries, Ltd. |
| Date | 2003/1/9 |
| Paper # | ED2002-255,MW2002-142 |
| Volume (vol) | vol.102 |
| Number (no) | 556 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |