| Presentation | 2002/10/4 Evaluation of electrical characteristics of InAlAs/InGaAs metamorphic HEMTs Kenji Kawada, Yutaka Ohno, Shigeru Kishimoto, Kouichi Maezawa, Takashi Mizutani, Misao Takakusaki, Hirofumi Nakata, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47As high electron mobility transistors (MHEMTs) were fabricated on GaAs substrates. A step graded InAlAs buffer layer was used to relax the lattice mismatch between the active layers and the substrates. The electrical characteristics of the MHEMTs were compared with those of HEMTs on InP substrates (InP HEMTs) and pseudomorphic HEMTs (PHEMTs). Present MHEMTs have exhibited superior characteristics in low-frequency (LF) noise and side-gate effect to InP HEMTs and PHEMTs. Sufficiently high current-gain cut-off-frequency of 210 GHz has been obtained for the MHEMTs with gate length of 0.1μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MHEMTs / metamorphic / step-graded buffer / low-frequency noise / side-gate effect / current-gain cut-off-frequency |
| Paper # | ED2002-218 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of electrical characteristics of InAlAs/InGaAs metamorphic HEMTs |
| Sub Title (in English) | |
| Keyword(1) | MHEMTs |
| Keyword(2) | metamorphic |
| Keyword(3) | step-graded buffer |
| Keyword(4) | low-frequency noise |
| Keyword(5) | side-gate effect |
| Keyword(6) | current-gain cut-off-frequency |
| 1st Author's Name | Kenji Kawada |
| 1st Author's Affiliation | Dept. of Quantum Eng., Nagoya Univ() |
| 2nd Author's Name | Yutaka Ohno |
| 2nd Author's Affiliation | Dept. of Quantum Eng., Nagoya Univ |
| 3rd Author's Name | Shigeru Kishimoto |
| 3rd Author's Affiliation | Dept. of Quantum Eng., Nagoya Univ |
| 4th Author's Name | Kouichi Maezawa |
| 4th Author's Affiliation | Dept. of Quantum Eng., Nagoya Univ |
| 5th Author's Name | Takashi Mizutani |
| 5th Author's Affiliation | Dept. of Quantum Eng., Nagoya Univ |
| 6th Author's Name | Misao Takakusaki |
| 6th Author's Affiliation | Toda Plant, Nikko Materials |
| 7th Author's Name | Hirofumi Nakata |
| 7th Author's Affiliation | Toda Plant, Nikko Materials |
| Date | 2002/10/4 |
| Paper # | ED2002-218 |
| Volume (vol) | vol.102 |
| Number (no) | 364 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |