| Presentation | 2002/10/3 Characterization of High Breakdown Voltage AlGaN/GaN Heterojunction FETs with a Field Plate Gate Yuji ANDO, Yasuhiro OKAMOTO, Hironobu MIYAMOTO, Tatsuo NAKAYAMA, Takashi INOUE, Masaaki KUZUHARA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN heterojunction FETs with a field plate gate were fabricated on SiC substrates. As the overlapping gate length (L_FP) increases, the breakdown voltage is improved. Imax>700 mA/mm and BVgd>100 V were obtained for L_FP ≧1μm. Also, the current collapse was negligibly small for the operation voltage up to 80 V. On-wafer load-pull measurements (2 GHz, CW) showed 7.1 W saturated power, 15.3 dB linear gain, and 56.0 % PAE for a 1 mm-wide device (Vdd =30 V). To our knowledge, a power density of 7.1 W/mm is the highest achieved for 1-mm class GaN-based FETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / SiC / FET / Field plate |
| Paper # | ED2002-214 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2002/10/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of High Breakdown Voltage AlGaN/GaN Heterojunction FETs with a Field Plate Gate |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiC |
| Keyword(3) | FET |
| Keyword(4) | Field plate |
| 1st Author's Name | Yuji ANDO |
| 1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Yasuhiro OKAMOTO |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 3rd Author's Name | Hironobu MIYAMOTO |
| 3rd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 4th Author's Name | Tatsuo NAKAYAMA |
| 4th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 5th Author's Name | Takashi INOUE |
| 5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 6th Author's Name | Masaaki KUZUHARA |
| 6th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| Date | 2002/10/3 |
| Paper # | ED2002-214 |
| Volume (vol) | vol.102 |
| Number (no) | 363 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |