| Presentation | 2002/10/3 High resistivity layer by implantation of Zn and its application to AlGaN/GaN HEMT Toshiyuki OISHI, Naruhisa MIURA, Muneyoshi SUITA, Takuma NANJO, Yuji ABE, Tatsuso OZEKI, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High sheet resistance of 3E13Ω/sq and high activation energy of 0.67eV were obtained for n^+-GaN layer implanted Zn ion along c-axis. By TRIM calculation, the implantation of heavy mass ion was observed to effectively transfer the energy to the nuclear and create a lot of vacancies. Anneal higher than 500℃ decreases the sheet resistance, which indicates that defects are formed by the damage. Zn implantation was applied to the isolation for AlGaN/GaN HEMT. High sheet resistance as well as that for n^+-GaN layer and good transistor characterization were obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Zn ion implantation / isolation / high resistivity / GaN / AlGaN/GaN HEMT |
| Paper # | ED2002-212 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/10/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High resistivity layer by implantation of Zn and its application to AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | Zn ion implantation |
| Keyword(2) | isolation |
| Keyword(3) | high resistivity |
| Keyword(4) | GaN |
| Keyword(5) | AlGaN/GaN HEMT |
| 1st Author's Name | Toshiyuki OISHI |
| 1st Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Naruhisa MIURA |
| 2nd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 3rd Author's Name | Muneyoshi SUITA |
| 3rd Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 4th Author's Name | Takuma NANJO |
| 4th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 5th Author's Name | Yuji ABE |
| 5th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 6th Author's Name | Tatsuso OZEKI |
| 6th Author's Affiliation | Advanced Technology R&D Center, Mitsubishi Electric Corporation |
| 7th Author's Name | Hiroyasu ISHIKAWA |
| 7th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 8th Author's Name | Takashi EGAWA |
| 8th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 9th Author's Name | Takashi JIMBO |
| 9th Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| Date | 2002/10/3 |
| Paper # | ED2002-212 |
| Volume (vol) | vol.102 |
| Number (no) | 363 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |