講演名 | 2002/10/3 Copper-Gate AlGaN/GaN HEMTs with Low Gate Leakage Current 敖 金平, 菊田 大悟, 大野 泰夫, |
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抄録(英) | The application of copper to AlGaN/GaN HEMT gate will benefit from the superior electronic conductivity for narrow gate and low cost. In this paper, evaluation of AlGaN/GaN HEMT with copper gate was presented. For a device with gate length of 2μm and drain-source distance of 10μum, extrinsic transconductance is about 60mS/mm at the gate voltage of -3V and drain voltage of 8V. Maximum drain current density is found to be 400mA/mm under gate voltage of 5V and drain voltage of 15.9V. At gate voltage of -15V, gate leakage currents are found to be as low as 5.4×10^-8 (1.08μA/mm) under drain voltage of 0.1V. For comparison, two kinds of devices were fabricated with same process conditions except the gate metals, one is Cu (200nm) gate type by thermal evaporation and another is Ni/Au (50nm/50nm) gate type by electron beam evaporation. Comparable I-V performances were obtained for the two kinds of devices. Threshold voltage shift exists mainly due to the metal work function difference between Cu and Ni but gate leakage current is lower for Cu gate device than that for NiAu gate device. No adherence problem was found during these experiments. These results indicate that copper is another candidate as gate metallization for AlGaN/GaN HEMT. |
キーワード(和) | |
キーワード(英) | AlGaN/GaN HEMT / Copper gate / Gate leakage current / Schottky contact |
資料番号 | ED2002-211 |
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研究会情報 | |
研究会 | ED |
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開催期間 | 2002/10/3(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | JPN |
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タイトル(英) | Copper-Gate AlGaN/GaN HEMTs with Low Gate Leakage Current |
サブタイトル(和) | |
キーワード(1)(和/英) | / AlGaN/GaN HEMT |
第 1 著者 氏名(和/英) | 敖 金平 / Jin-Ping Ao |
第 1 著者 所属(和/英) | 徳大SVBL Satellite Venture Business Laboratory, The University of Tokushima |
第 2 著者 氏名(和/英) | 菊田 大悟 / Daigo Kikuta |
第 2 著者 所属(和/英) | 徳大工 Department of Electrical and Electronic Engineering, The University of Tokushima |
第 3 著者 氏名(和/英) | 大野 泰夫 / Yasuo Ohno |
第 3 著者 所属(和/英) | 徳大工 Department of Electrical and Electronic Engineering, The University of Tokushima |
発表年月日 | 2002/10/3 |
資料番号 | ED2002-211 |
巻番号(vol) | vol.102 |
号番号(no) | 363 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |