| Presentation | 2002/10/3 Measurement of Surface-States in AlGaN/GaN HEMT with Open-Gate FET Daigo KIKUTA, Jin-Ping AO, Yasuo OHNO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Interface properties between passivation films and semiconductor on AlGaN/GaN high electron mobility transistor (HEMT) was investigated with open-gate field effect transistor (FET) in which a part of the gate metal is removed. Channel conductivity was measured changing the gate voltage which electrodes are placed along the channel edges. FET without passivation film showed no cutoff while FET with SiO_2 passivation film showed a similar variation as those conventional metal gate FET. Applying different voltages on the two electrodes on each side of the channel, the conductivity is almost determined by the lower voltage electrode. Using these results, interface states properties are investigated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / passivation / interface / open-gate FET / interface-state |
| Paper # | ED2002-210 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/10/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Measurement of Surface-States in AlGaN/GaN HEMT with Open-Gate FET |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | passivation |
| Keyword(3) | interface |
| Keyword(4) | open-gate FET |
| Keyword(5) | interface-state |
| 1st Author's Name | Daigo KIKUTA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, The University of Tokushima() |
| 2nd Author's Name | Jin-Ping AO |
| 2nd Author's Affiliation | Satellite Venture Business Laboratory, The University of Tokushima |
| 3rd Author's Name | Yasuo OHNO |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, The University of Tokushima |
| Date | 2002/10/3 |
| Paper # | ED2002-210 |
| Volume (vol) | vol.102 |
| Number (no) | 363 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |