| Presentation | 2002/10/3 Chemical and electronic properties of GaN and AlGaN Surfaces Tamotsu Hashizume, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Chemical and electronic properties of p-GaN and GaN/AlGaN surfaces after various types of wet and plasma treatments were investigated. Surface chemical properties greatly denend on natural oxides, dopants and processings. Change in surface composition affected Fermi level position, band bending and defect states at GaN-related materials. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-GaN / AlGaN / surface / plasma / XPS |
| Paper # | ED2002-209 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/10/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Chemical and electronic properties of GaN and AlGaN Surfaces |
| Sub Title (in English) | |
| Keyword(1) | p-GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | surface |
| Keyword(4) | plasma |
| Keyword(5) | XPS |
| 1st Author's Name | Tamotsu Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| Date | 2002/10/3 |
| Paper # | ED2002-209 |
| Volume (vol) | vol.102 |
| Number (no) | 363 |
| Page | pp.pp.- |
| #Pages | 6 |
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