| Presentation | 2004/5/7 Excess carrier lifetime measurements in SiC wafers and Its relationship with structural defect distribution T. Mori, M. Kato, M. Ichimura, E. Arai, S. Sumie, H. Hashizume, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Excess carrier lifetime is an important parameter and reflects crystal quality of semiconductor materials. It affects most of semiconductor devices, especially bipolar devices and high frequency devices. Although SiC is a promising material for high power devices, it has short carrier lifetimes. In this study, we have measured carrier lifetimes in bulk SiC wafers, and have compared them with structural defect and carrier concentration distribution. It was found that relatively long lifetime regions correspond to regions with high density of structural defects in a n-type wafers. Conversely in p-type wafer, relatively short lifetime regions correspond to regions with high density of structural defects. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | bulk SiC wafer / excess carrier lifetime / μ-PCD method / structural defect / carrier concentration |
| Paper # | ED2004-34,CPM2004-29,SDM2004-34 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/5/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Excess carrier lifetime measurements in SiC wafers and Its relationship with structural defect distribution |
| Sub Title (in English) | |
| Keyword(1) | bulk SiC wafer |
| Keyword(2) | excess carrier lifetime |
| Keyword(3) | μ-PCD method |
| Keyword(4) | structural defect |
| Keyword(5) | carrier concentration |
| 1st Author's Name | T. Mori |
| 1st Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology() |
| 2nd Author's Name | M. Kato |
| 2nd Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 3rd Author's Name | M. Ichimura |
| 3rd Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 4th Author's Name | E. Arai |
| 4th Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 5th Author's Name | S. Sumie |
| 5th Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology |
| 6th Author's Name | H. Hashizume |
| 6th Author's Affiliation | Dept. of Electrical and Computer Engineering, Nagoya Institute of Technology |
| Date | 2004/5/7 |
| Paper # | ED2004-34,CPM2004-29,SDM2004-34 |
| Volume (vol) | vol.104 |
| Number (no) | 42 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |