講演名 | 2004/5/7 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate , |
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抄録(和) | |
抄録(英) | GaAs-on-Si solar cell will be playing an important role for space applications because Si substrate is low-cost, lightweight and large-area also its radiation tolerant behavior. We have reported the radiation effects of high-energy electron (1 MeV, fluences of 1x10^<13>, 1x10^<14>, 1x10^<15> and 1x10^<16>cm^<-2>) on GaAs layers on Si and GaAs substrates grown by metal organic chemical vapor deposition. After the irradiation, there are no considerable changes for barrier height and ideality factor in the diodes on Si substrate. The number of trap level increases more in case of GaAs/GaAs compared with GaAs/Si. The solar cell parameters such as short -circuit current (Isc), open circuit-voltage (Voc), fill factor (FF) and conversion efficiency are studied under dark and AMO conditions. The degradation rate of Voc and Pmax for GaAs /GaAs solar cell is faster than GaAs/Si solar cell at higher fluences. The slow degradation of GaAs/Si solar cell is due to slow generation of As vacancy in the base layer. These experimental results suggest that GaAs solar cell on Si substrate has higher radiation resistance compared with GaAs solar cell on GaAs substrate under 1 MeV electron irradiation. |
キーワード(和) | |
キーワード(英) | GaAs/Si / Electron irradiation / Solar cell |
資料番号 | ED2004-32,CPM2004-27,SDM2004-32 |
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研究会情報 | |
研究会 | CPM |
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開催期間 | 2004/5/7(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Component Parts and Materials (CPM) |
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本文の言語 | ENG |
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サブタイトル(和) | |
タイトル(英) | 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate |
サブタイトル(和) | |
キーワード(1)(和/英) | / GaAs/Si |
第 1 著者 氏名(和/英) | / Nallathambi CHANDRASEKARAN |
第 1 著者 所属(和/英) | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology |
発表年月日 | 2004/5/7 |
資料番号 | ED2004-32,CPM2004-27,SDM2004-32 |
巻番号(vol) | vol.104 |
号番号(no) | 42 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |