| Presentation | 2004/5/7 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate Nallathambi CHANDRASEKARAN, Tetsuo SOGA, Yousuke INUZUKA, Hironori TAGUCHI, Takashi JIMBO, Mitsuru IMAIZUMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaAs-on-Si solar cell will be playing an important role for space applications because Si substrate is low-cost, lightweight and large-area also its radiation tolerant behavior. We have reported the radiation effects of high-energy electron (1 MeV, fluences of 1x10^<13>, 1x10^<14>, 1x10^<15> and 1x10^<16>cm^<-2>) on GaAs layers on Si and GaAs substrates grown by metal organic chemical vapor deposition. After the irradiation, there are no considerable changes for barrier height and ideality factor in the diodes on Si substrate. The number of trap level increases more in case of GaAs/GaAs compared with GaAs/Si. The solar cell parameters such as short -circuit current (Isc), open circuit-voltage (Voc), fill factor (FF) and conversion efficiency are studied under dark and AMO conditions. The degradation rate of Voc and Pmax for GaAs /GaAs solar cell is faster than GaAs/Si solar cell at higher fluences. The slow degradation of GaAs/Si solar cell is due to slow generation of As vacancy in the base layer. These experimental results suggest that GaAs solar cell on Si substrate has higher radiation resistance compared with GaAs solar cell on GaAs substrate under 1 MeV electron irradiation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs/Si / Electron irradiation / Solar cell |
| Paper # | ED2004-32,CPM2004-27,SDM2004-32 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/5/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | GaAs/Si |
| Keyword(2) | Electron irradiation |
| Keyword(3) | Solar cell |
| 1st Author's Name | Nallathambi CHANDRASEKARAN |
| 1st Author's Affiliation | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology() |
| 2nd Author's Name | Tetsuo SOGA |
| 2nd Author's Affiliation | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology |
| 3rd Author's Name | Yousuke INUZUKA |
| 3rd Author's Affiliation | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology |
| 4th Author's Name | Hironori TAGUCHI |
| 4th Author's Affiliation | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of TechnologyDepartment of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology |
| 5th Author's Name | Takashi JIMBO |
| 5th Author's Affiliation | Department of Enviornmental Technology and Urban Planning, Nagoya Institute of Technology |
| 6th Author's Name | Mitsuru IMAIZUMI |
| 6th Author's Affiliation | apan Aerospace Exploration Agency |
| Date | 2004/5/7 |
| Paper # | ED2004-32,CPM2004-27,SDM2004-32 |
| Volume (vol) | vol.104 |
| Number (no) | 42 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |