| Presentation | 2004/5/7 Characterization of deep levels in 4H-SiC epilayers by Optical Capacitance Transient Spectroscopy(O-CTS) Shouichi TANAKA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Shun-ichi NAKAMURA, Tsunenobu KIMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon carbide is a promising material for high power and high frequency devices because of its physical property. However, there are crystalline defects forming deep levels even in epitaxial layers. In this study we characterize deep levels in as-grown 4H-SiC epilayers on 4H-SiC off axis substrates. Thermal activation energies of the deep levels were measured by deep level transient Spectroscopy (DLTS) and optical excitation energies were measured by optical capacitance transient Spectroscopy (O-CTS). From these results we drew the configuration coordinate diagrams for which show the interaction between electrons and phonons at deep levels. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC epilayer / deep level / DLTS / O-CTS / configuration coordinate diagram |
| Paper # | ED2004-31,CPM2004-26,SDM2004-31 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2004/5/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of deep levels in 4H-SiC epilayers by Optical Capacitance Transient Spectroscopy(O-CTS) |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC epilayer |
| Keyword(2) | deep level |
| Keyword(3) | DLTS |
| Keyword(4) | O-CTS |
| Keyword(5) | configuration coordinate diagram |
| 1st Author's Name | Shouichi TANAKA |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | Masashi KATO |
| 2nd Author's Affiliation | Nagoya Institute of Technology |
| 3rd Author's Name | Masaya ICHIMURA |
| 3rd Author's Affiliation | Nagoya Institute of Technology |
| 4th Author's Name | Eisuke ARAI |
| 4th Author's Affiliation | Nagoya Institute of Technology |
| 5th Author's Name | Shun-ichi NAKAMURA |
| 5th Author's Affiliation | Kyoto University |
| 6th Author's Name | Tsunenobu KIMOTO |
| 6th Author's Affiliation | Kyoto University |
| Date | 2004/5/7 |
| Paper # | ED2004-31,CPM2004-26,SDM2004-31 |
| Volume (vol) | vol.104 |
| Number (no) | 42 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |